Josef Lutz studied Physics at the University of Stuttgart, from 1983 he was with Semikron Elektronik, in Nuremberg. In 1999 he graduated as PhD in electrical engineering at the university of Ilmenau. Since August 2001 he is Professor for Power Electronics and Electromagnetic Compatibility at the Chemnitz University of Technology. He is senior member of IEEE, member of the advisory board of the Journal Microelectronics Reliability and he serves in several international committees (PCIM, EPE, ISPS, CIPS). He has published more than 270 scientific articles and conference contributions and is inventor or co-inventor of more than 25 patents. His main publication is the book "Semiconductor Power Devices - Physics, Characteristics, Reliability", printed in German (2006, 2012), in English (2011, 2018) and in Chinese (2013). His focus of research is on power semiconductor devices, ruggedness, reliability. In 2005, he was elected as honorary professor at the North Caucasian Technical University in Stavropol. He received the international Outstanding Achievements Award at the European Conference on Power Electronics and Applications EPE 2017.
Power cycling capability is a main criterion for the design of power electronics equipment. It is a clear progress that there is now a European standard for power modules. Power electronics evolves to higher power density packages. This leads to systematic measurement errors which have been neglected in the past. They are now of significant influence and should be considered as well. When going from Si to SiC devices, especially SiC MOSFETs, a new test method is suggested. More semiconductor physics related effects have to be taken into account, and not all modifications during ageing of a device can be adjusted to the ageing of the interconnections, as it is practice with Si. A more detailed test documentation is recommended.